发明名称 Manufacturing method of semiconductor device
摘要 A pattern correction method executed by a computer includes a first correction and a second correction. The first correction is executed by calculating a correction value, in consideration for an optical proximity effect, for edges (first edges) meeting a condition among the edges constituting a designed pattern. Subsequently, The second correction is executed for an edge (second edge) which does not meet the condition, by use of the correction value of any one of the edges (first edges) adjacent to the second edge among the first edges for which the first correction is executed, thus connecting the corrected first edge and the corrected second edge by a line segment. The pattern is corrected to a shape suitable for a mask drawing and a check with simple processing.
申请公布号 US7509623(B2) 申请公布日期 2009.03.24
申请号 US20060381262 申请日期 2006.05.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOBAYASI SACHIKO;KOTANI TOSHIBA;TANAKA SATOSHI;WATANABE SUSUMU;YANO MITSUHIRO
分类号 G03F1/08;G06F17/50;G03F1/00;G03F1/14;G03F1/36;G03F1/68;G03F1/70;G03F7/00;G03F7/20;H01L21/027 主分类号 G03F1/08
代理机构 代理人
主权项
地址