| 发明名称 |
Semiconductor apparatus and method of fabricating the apparatus |
| 摘要 |
A via hole is formed by a first step of forming an opening in a resin insulating film by laser radiation, a second step of forming an opening in said resin insulating film by dry etching and a third step of performing reverse sputtering in a plasma environment. |
| 申请公布号 |
US7507658(B2) |
申请公布日期 |
2009.03.24 |
| 申请号 |
US20050086635 |
申请日期 |
2005.03.22 |
| 申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
USUI RYOSUKE;INOUE YASUNORI;MIZUHARA HIDEKI |
| 分类号 |
H01L21/4763;H01L23/52;H01L21/28;H01L21/44;H01L21/56;H01L21/60;H01L21/768;H01L23/538;H01L29/40 |
主分类号 |
H01L21/4763 |
| 代理机构 |
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代理人 |
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