发明名称 |
Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof |
摘要 |
The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.
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申请公布号 |
US7507614(B2) |
申请公布日期 |
2009.03.24 |
申请号 |
US20070890991 |
申请日期 |
2007.08.08 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
RIM JAE-YOUNG;KO HO-SOON |
分类号 |
H01L21/316;H01L21/84;H01L21/00;H01L21/336;H01L21/76;H01L27/14;H01L27/146;H01L31/00;H04N5/335;H04N5/361;H04N5/369;H04N5/374 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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