发明名称 Method for electrical doping a semiconductor material with Cesium
摘要 The invention relates to a method for doping a semiconductor material with Cesium, wherein said semiconductor material is exposed to a cesium vapor. Said Cesium vapor is provided by Cesium sublimation from a Cesium alloy. There is also provided an organic light emitting diode comprising at least one layer of a Cesium doped organic semiconductor material, wherein said at least one layer of said Cesium doped organic semiconductor material is doped with Cesium provided by Cesium evaporation of Cesium from a Cesium alloy. The Cesium vapor is preferably provided by Cesium sublimation from a standard organic material deposition evaporator.
申请公布号 US7507649(B2) 申请公布日期 2009.03.24
申请号 US20050241477 申请日期 2005.09.30
申请人 NOVALED AG 发明人 WERNER ANSGAR;ROMAINCZYK TILMANN
分类号 H01L21/22 主分类号 H01L21/22
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