SUBSTRATE PROCESSING APPARATUS AND COATING METHOD

摘要

A substrate processing apparatus and a coating method is provided to coat a film on a space for generating plasma of a reaction tube by supplying a second and a third gas to the space where a plasma is generated. A partition(236) made of quartz is installed between an inner side of a reaction tube(203) and a wafer. The end part of the partition is adhered closely to the inner wall of the reaction tube. The upper portion and bottom of the partition are adhered closely to the inner wall of the reaction tube. A buffer room(237) is formed by being surrounded by a part of the reaction tube and partition inside partition. A plurality of gas supply holes(248a) is installed on the partition opposite of the wafer. The nozzle is connected to a gas supply pipe(232a), and a plurality of gas supply holes(248b) is formed on the nozzle. An opening area of the gas supply hole is gradually widened from an upstream side to a downstream side.