发明名称 |
Semiconductor device and method of manufacturing same |
摘要 |
A semiconductor device comprises: a semiconductor chip; a first frame; a solder layer which bonds the solder bonding metal layer of the semiconductor chip and the first frame; and a second frame bonded to the rear face of the semiconductor chip. The semiconductor chip includes: a semiconductor substrate; a first metal layer provided on a major surface of the semiconductor substrate and forming a Schottky junction with the semiconductor substrate; a second metal layer provided on the first metal layer and primarily composed of aluminum; a third metal layer provided on the second metal layer and primarily composed of molybdenum or titanium; and a solder bonding metal layer provided on the third metal layer and including at least a fourth metal layer which is primarily composed of nickel, ion or cobalt.
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申请公布号 |
US7508077(B2) |
申请公布日期 |
2009.03.24 |
申请号 |
US20050171282 |
申请日期 |
2005.07.01 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
WATANABE MITSURU;FUKUI TETSUYA |
分类号 |
H01L23/52;H01L23/48;H01L29/40 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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