发明名称 Fabrication of semiconductor devices
摘要 Fabrication of microelectronic devices is accomplished using a substrate having a recessed pattern. In one approach, a master form is used to replicate a substrate having a pit pattern. In another approach, the substrate is produced by etching. A series of stacked layers having desired electrical characteristics is applied to the substrate and planarized in a manner that creates electrical devices and connections therebetween. The microelectronic devices can include a series of row and columns and are used to store data at their intersection.
申请公布号 US7507663(B2) 申请公布日期 2009.03.24
申请号 US20070655470 申请日期 2007.01.19
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分类号 H01L21/44 主分类号 H01L21/44
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