| 摘要 |
A manufacturing method of the semiconductor device is provided to shorten the throughput time by forming the contact hole without additional equipment. An insulating layer(120) is formed on the upper part of lower structure. The first photo resist pattern having the footing profile is formed on the insulating layer. The insulating layer exposed between the first photo resist patterns is etched by the anisotropic etching equipment and forms the first hole area having the isotropic etching profile. The first photo resist pattern is removed. The second photoresist pattern(150) is formed on the top of the insulating layer. The insulating layer exposed between the second photo resist patterns is etched by the anisotropic etching equipment and forms the contact hole having the anisotropic etching profile. The second photoresist pattern is removed.
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