| 发明名称 |
A METHOD OF GROWING SEMICONDUCTOR HETEROSTRUCTURES BASED ON GALLIUM NITRIDE |
| 摘要 |
A method of growing semiconductor hetero-structures based on a gallium nitride is provided to reduce a defect density and a mechanical stress by performing the weather deposition step of one or multiple hetero-structure layers. A gallium nitride group semiconductor hetero-structure growth process comprises a weather deposition step of one expressed as the general equation AlxGa1-xN(0<x<=1) or multiple hetero-structure layers. In the A3N structure growth step using - langasite(La3Ga5SiO14) substrate is used in order to reduce the defect density and mechanical stress. The La3-x-yCexPryGa5SiO 14(x=0.1/3%, y=0.01/1%) langasite substrate(1) is used as the substrate growing the A3N structure. The substrate is transformed to the yellow fluorescence with a part of the dark blue emission of the hetero-structure. |
| 申请公布号 |
KR20090029685(A) |
申请公布日期 |
2009.03.23 |
| 申请号 |
KR20087019326 |
申请日期 |
2007.02.06 |
| 申请人 |
SEOUL SEMICONDUCTOR CO., LTD.;ABRAMOV VLADIMIR SEMENOVICH |
发明人 |
ABRAMOV VLADIMIR SEMENOVICH;SOSHCHIN NAUM PETROVICH;SUSHKOV VALERIY PETROVICH;SHCHERBAKOV NIKOLAY VALENTINOVICH;ALENKOV VLADIMIR VLADIMIROVICH;SAKHAROV SERGEI ALEKSANDROVICH;GORBYLEV VLADIMIR ALEKSANDROVICH |
| 分类号 |
C30B25/18;H01L33/04;C30B29/38;H01L33/00;H01L33/32 |
主分类号 |
C30B25/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
