| 摘要 |
A manufacturing method of the semiconductor device is provided to secure the reliability of the semiconductor device by reducing the parasitic capacitance of the wiring member and the capacitive coupling. An insulating layer(20) between the wirings is evaporated on a substrate(10). The insulating layer between the wirings is etched and the first trench is formed. An anti-refractive coating layer reclaims the first trench. The anti-refractive coating layer is recessed and the recess region is formed. The first insulating layer(60) is formed on the recess region and the top of the insulating layer between the wirings. The second trench is formed by etching the first insulating layer and the insulating layer between the wirings. A copper routing(80) is formed within the second trench.
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