| 摘要 |
A self refresh control circuit of a semiconductor memory device is provided to perform an operation such as a refresh property of a memory cell by selecting an output signal of one among circuits having two or more temperature property. A temperature sensor(300) senses temperature of a semiconductor memory chip. A first cycle signal generating part(400) generates a first self refresh signal according to a first temperature property cycle tilt based on a sensing result of the temperature sensor. A second cycle signal generating part(500) generates a second self refresh signal according to a second temperature property cycle tilt based on a sensing result of the temperature sensor. A cycle sensing part(600) receives the first self refresh signal and the second self refresh signal, and selectively outputs one among the first self refresh signal and the second self refresh signal according to a refresh property of the memory cell.
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