发明名称 Event driven switch level simulation method and simulator
摘要 A method for simulating an integrated circuit includes performing a power supply voltage tuning operation to find a power supply voltage at which a simulation of the integrated circuit at an operating frequency passes a functional requirement, identifying a weak signal node based on the simulation result, and performing a size tuning operation on the weak signal node of the integrated circuit.
申请公布号 US7506284(B2) 申请公布日期 2009.03.17
申请号 US20060336744 申请日期 2006.01.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SEUK-WHAN;YOO MOON-HYUN;CHOI JOON-HO
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
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