发明名称 |
Image sensor and method for fabricating the same |
摘要 |
A complementary metal oxide semiconductor (CMOS) image sensor capable of improving photosensitivity and a signal to noise ratio and a method for fabricating the same are provided. An image sensor for embodying the colors of red, green and blue includes: a plurality of photodiodes formed on a substrate and collecting light incident to different unit pixels; a silicon oxide layer formed on the plurality of photodiodes; a silicon nitride layer formed on the silicon oxide layer, wherein the silicon nitride layer is formed in a single layer in unit pixels of green and blue and split into two layers on an upper portion of the unit pixel of red; and a plurality of microlenses formed on portions of the silicon nitride layer corresponding to the respective photodiodes.
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申请公布号 |
US7504681(B2) |
申请公布日期 |
2009.03.17 |
申请号 |
US20050192848 |
申请日期 |
2005.07.28 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
LIM YOUN-SUB |
分类号 |
H01L31/062;H01L27/14;H01L27/146;H04N5/335;H04N5/369;H04N5/374 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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