发明名称 |
Semiconductor memory device having low-resistance tungsten line and method of manufacturing the semiconductor memory device |
摘要 |
A semiconductor memory device and a method of manufacturing the semiconductor memory device, in which a bit line can have a low resistance without an increase in the thickness of the bit line. In the semiconductor memory device, an insulating layer having a contact hole that exposes a conductive region is formed on a semiconductor substrate having the conductive region. A barrier metal layer is formed along the surface of the insulating layer and the surface of the contact hole. A grain control layer is formed between the barrier metal layer and the tungsten layer. A tungsten layer is formed on the grain control layer. A grain size of the tungsten layer is increased by the grain control layer.
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申请公布号 |
US7504725(B2) |
申请公布日期 |
2009.03.17 |
申请号 |
US20040915871 |
申请日期 |
2004.08.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM RAK-HWAN;KIM YOUNG-CHEON;LEE HYEON-DEOK;KIM HYUN-YOUNG;PARK IN-SUN |
分类号 |
H01L21/28;H01L23/52;H01L21/285;H01L21/768;H01L21/8242;H01L23/485 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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