METHOD FOR FABRICATING MINUTE PATTERN IN SEMICONDUCTOR DEVICE

摘要

A method of manufacturing the micro-pattern of the semiconductor device is provided to improve the double patterning technology using photoresist and to implement the pattern having precision. The hard mask layer(23) is formed on the etch target layer(21). The sacrificial layer pattern(24A) is formed on the hard mask layer. The spacer(28A) is formed in the side wall of the sacrificial layer pattern. The sacrificial layer pattern is removed. The hard mask layer is etched by using the spacer as the etch barrier. By using the hard mask layer as the etch barrier, it is the etch target layer is etched to form the pattern.