发明名称 SUBSTRATE AND MANUFACTURING METHOD THEREOF
摘要 <p>A substrate and a manufacturing method thereof are provided to improve the etching factor by controlling the size of the grain per the unit volume within the conductive layer. The conductive layer is formed on the one side of the base material. The formation of the conductive layer is performed after forming the first metal layer on the one side of the base material(S310) and forming the second metal layer on the one side of the first metal layer into the plating process(S320). The grain number per the unit volume of the first metal layer and the second metal layer is controlled by changing the chemical composition of the plating liquid used in the plating process. The etching resist pattern is formed on the one side of the conductive layer(S330). The conductive layer is etched and the circuit pattern is formed(S340).</p>
申请公布号 KR100889291(B1) 申请公布日期 2009.03.17
申请号 KR20070092697 申请日期 2007.09.12
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM, MIN SUNG;LEE, JONG JIN;CHO, YOUNG WOONG;CHOI, JONG MIN;HUH, YOON
分类号 H01L21/027 主分类号 H01L21/027
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