| 摘要 |
An internal voltage generating circuit is provided to prevent a DRAM fault generation by generating a sufficient pumping voltage by a pumping circuit. An internal voltage generating circuit comprises a voltage detection circuit(31), a first oscillation part(32), a first pumping circuit(34), a temperature information output device(36), a second oscillation part(37), and a second pumping circuit(33). The voltage detection circuit detects a voltage level of a pumping voltage by comparing a reference voltage with the pumping voltage. The firs oscillation part generates a first clock signal based on an output signal of the detection circuit. The first pumping circuit generates the pumping voltage based on the first clock signal. The temperature information output device outputs different temperature information according to a temperature change. The second oscillation part generates a second clock signal based on the temperature information outputted from the temperature information output device. The second pumping circuit generates the pumping voltage based on the second clock signal. |
