发明名称 Multi-port semiconductor memory device having variable access paths and method
摘要 A multi-port semiconductor memory device having variable access paths and a method therefore are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.
申请公布号 US7505353(B2) 申请公布日期 2009.03.17
申请号 US20060466389 申请日期 2006.08.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM NAM-JONG;LEE HO-CHEOL;KWON KYOUNG-HWAN;HWANG HYONG-RYOL;AHN HYO-JOO
分类号 G11C8/00;G11C7/10;G11C8/12;G11C8/16 主分类号 G11C8/00
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