Perfectionnements aux procédés de fabrication des transistors à effet de champ àélectrodes annulaires,申请号FR19590809587-传众专利搜索

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发明名称	Perfectionnements aux procédés de fabrication des transistors à effet de champ àélectrodes annulaires
摘要
申请公布号	FR1249279(A)	申请公布日期	1960.12.30
申请号	FR19590809587	申请日期	1959.11.07
申请人		发明人	FRANKE JOACHIM-IMMANUEL
分类号	H01L21/335;H01L29/00;H01L29/02;H01L29/06;H01L29/73;H01L29/80	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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