Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography

摘要

A method for depositing, by ion beam sputtering, a multilayer reflective coating of a reflective mask blank for EUV lithography on a substrate having a concave defect formed thereon, characterized in that the method comprises carrying out ion beam sputtering so that an absolute value of an angle alpha formed between a normal line of a substrate and sputtered particles landing on the substrate is maintained so as to satisfy the formula of 35°<=alpha<=80° while rotating the substrate about a central axis thereof.