发明名称 |
Method of forming a Yb-DOPED Ni full silicidation low work function gate electrode for n-MOSFET |
摘要 |
Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
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申请公布号 |
US7504329(B2) |
申请公布日期 |
2009.03.17 |
申请号 |
US20060382875 |
申请日期 |
2006.05.11 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC);NATIONAL UNIVERSITY OF SINGAPORE (NUS);TEXAS INSTRUMENTS INCORPORATED |
发明人 |
YU HONGYU;JINGDE CHEN;MINGFU LI;KWONG DIM-LEE;BIESEMANS SERGE;KITTL JORGE ADRIAN |
分类号 |
H01L21/477 |
主分类号 |
H01L21/477 |
代理机构 |
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代理人 |
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