发明名称 |
Process for forming an electronic device including transistor structures with sidewall spacers |
摘要 |
An electronic device can include a first transistor structure including a first gate electrode surrounded by a first sidewall spacer having a first stress and a second transistor structure including a second gate electrode surrounding a second sidewall spacer having second stress. The first sidewall spacer is an only sidewall spacer surrounding the first gate electrode or a closer sidewall spacer as compared to any other sidewall spacer that surrounds the first gate electrode and the second sidewall spacer is an only sidewall spacer surrounding the second gate electrode or a closer sidewall spacer as compared to any other sidewall spacer that surrounds the second gate electrode, wherein the first stress has a lower value as compared to the second stress. More than one process can be used to form the electronic device.
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申请公布号 |
US7504289(B2) |
申请公布日期 |
2009.03.17 |
申请号 |
US20050258781 |
申请日期 |
2005.10.26 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
LIM SANGWOO;FILIPIAK STANLEY L.;GRUDOWSKI PAUL A.;KOLAGUNTA VENKAT R. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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