VERTICAL SEMICONDUCTIOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A semiconductor light emitting device of vertical structure and a method of manufacturing thereof are provided to effectively distribute the current of the p between electrode and N side electrode and to improve the luminous efficiency and internal pressure of static electricity. The active layer(22) is formed on the n-type semiconductor layer(21). The p-type semiconductor layer(23) is formed on the active layer. Each pattern of the current constraining layers(24) is separated from on the p-type semiconductor layer. The current constraining layer is formed with one or more material among oxide, and nitride and metal. The metal can form the p-type semiconductor layer and Schottky barrier. The N side electrode is formed in the lower-part of the n-type semiconductor layer.