发明名称 |
Semiconductor device with a floating gate electrode that includes a plurality of particles |
摘要 |
The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided.
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申请公布号 |
US7504663(B2) |
申请公布日期 |
2009.03.17 |
申请号 |
US20050136705 |
申请日期 |
2005.05.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ISOBE ATSUO;YAMAGUCHI TETSUJI;GODO HIROMICHI |
分类号 |
H01L29/786;H01L21/77;H01L21/8247;H01L21/84;H01L27/12;H01L27/13;H01L29/788 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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