发明名称 |
FILM FORMING METHOD AND FILM FORMING APPARATUS |
摘要 |
A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with vapor and a material gas composed of an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer. |
申请公布号 |
KR20090027736(A) |
申请公布日期 |
2009.03.17 |
申请号 |
KR20097001205 |
申请日期 |
2007.07.17 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOJIMA YASUHIKO;IKEDA TARO;HATANO TATSUO |
分类号 |
C23C16/18;H01L21/285;H01L21/3205 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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