| 摘要 |
Nucleic acid detecting sensor includes field-effect transistor, detector which detects target nucleic acid molecules having sequences from sample based on degree of a variation in threshold voltage of field-effect transistor, and at least one nucleic acid probe molecule which is hybridized with corresponding one of target nucleic acid molecules, and is immobilized on gate of field-effect transistor, wherein gate width of field-effect transistor is of order of length obtained by expression given below (Ipos="post">0Ipos="post">rkpos="post">BT/epos="post">2n)pos="post"> 1/2 where I0 is dielectric constant of vacuum, Ir is relative dielectric constant of channel region, kB is Boltzmann constant, T is absolute temperature of the channel region, e is elementary charge, and n is equilibrium carrier density in the channel region in field-effect transistor where channel is formed. |
