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发明名称
半导体装置及其制造方法
摘要
一种半导体装置及其制造方法,此半导体装置系包含:形成于半导体基板之第一导电型阱中的多个彼此间隔一定距离之第二导电型漂移区,从上述漂移区突出的垂直区,以及形成于垂直区之上的第二导电型源极╱汲极区。上述垂直区可为电流路径提供一个延长的漂移区。
申请公布号
TW200913266
申请公布日期
2009.03.16
申请号
TW097133816
申请日期
2008.09.03
申请人
东部高科股份有限公司
发明人
周昌永
分类号
H01L29/78(2006.01);H01L21/336(2006.01)
主分类号
H01L29/78(2006.01)
代理机构
代理人
许世正
主权项
地址
南韩
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