| 摘要 |
<p>A method for manufacturing pillar pattern is provided to form the pillar head pattern by the growth method and to lower the interface resistance between the pillar neck pattern and the pillar head patter. The substrate(31) is etched and the pillar neck pattern(32) is formed. The pillar head pattern(34A) is formed on the pillar neck pattern. The pillar head pattern has the width which is broad than the pillar neck pattern. The pillar head pattern can be formed with the silicon film. The pillar head pattern can be formed by the deposition producing or the growth process. The substrate can be formed with the silicon film. The pillar head pattern can be formed with the thickness of 300~500Å.</p> |
