发明名称 CIRCUIT CONFIGURATIONS TO REDUCE SNAPBACK OF A TRANSIENT VOLTAGE SUPPRESSOR
摘要 This invention discloses an electronic device formed as an integrated circuit (IC) wherein the electronic device further includes a transient voltage suppressing (TVS) circuit. The TVS circuit includes a triggering Zener diode connected between an emitter and a collector of a bipolar-junction transistor (BJT) wherein the Zener diode having a reverse breakdown voltage BV less than or equal to a BVceo of the BJT where BVceo stands for a collector to emitter breakdown voltage with base left open. The TVS circuit further includes a rectifier connected in parallel to the BJT for triggering a rectified current through the rectifier for further limiting an increase of a reverse blocking voltage. In a preferred embodiment, the triggering Zener diode, the BJT and the rectifier are formed in a semiconductor substrate by implanting and configuring dopant regions of a first and a second conductivity types in a N-well and a P-well whereby the TVS can be formed in parallel as part of the manufacturing processes of the electronic device.
申请公布号 KR20090026766(A) 申请公布日期 2009.03.13
申请号 KR20087030599 申请日期 2008.12.16
申请人 ALPHA AND OMEGA SEMICONDUCTOR LIMITED 发明人 MALLIKARARJUNASWAMY SHEKAR
分类号 H01L27/02;H01L29/861 主分类号 H01L27/02
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