| 摘要 |
<p>A method for manufacturing of phase change RAM device is provided to reduce the contact resistance between PN diode and word line by connecting the PN diode and word line through a salicide layer. A method for manufacturing of phase change RAM device is comprised of the steps: forming the salicide layer(120) on the active area of a semiconductor substrate(100); forming the vertical type PN diode(130) on the active area in which the salicide layer is formed; forming a word line connected with the vertical type PN diode on the active area where the salicide layer is formed through a salicide layer; forming a first conductive type impurity region of the line type is formed within the surface of the active area before forming the salicide layer. The first conductive type impurity region is formed through an N type impurity ion injection process.</p> |
