| 摘要 |
A semiconductor device and method of manufacturing the same is provided to prevent the boosting or drop of a gate voltage at the cell region even if the gate is inclined at the dummy region. A semiconductor device includes a semiconductor which is divided by a cell region and dummy region. The gate and source / drain region are formed on the each region of the semiconductor board. A landing plug is formed on the source/drain region of the cell region and an insulation pattern is formed on the source/drain region of the cell region. A semiconductor device and manufacturing method thereof is comprised of the steps: forming the gate on the each region of the semiconductor board; forming a landing plug on the cell region.
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