| 摘要 |
A programming method of a non volatile memory device is provided to uniformly control a channel boosting phenomenon by supplying a pass voltage to a word line of a cell according to a state of a cell. A programming method of a non volatile memory device comprises the following steps: a step for determining a state of a cell which is in a top of a cell to be programmed(610); a step for supplying a first pass voltage to a word line of the cell in case the cell is in a first state(622); a step for supplying a second pass voltage higher than the first pass voltage to the word line of the cell in case the cell is in a second state(624); and a step for performing a programming operation according to a supplied pass voltage(630). |
