发明名称 |
SHIELDED GATE TRENCH MOSFET CELLS IMPLEMENTED WITH A SCHOTTKY SOURCE CONTACT |
摘要 |
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode. |
申请公布号 |
KR20090026747(A) |
申请公布日期 |
2009.03.13 |
申请号 |
KR20087024766 |
申请日期 |
2008.10.09 |
申请人 |
ALPHA AND OMEGA SEMICONDUCTOR LIMITED |
发明人 |
BHALLA ANUP;LUI SIK K. |
分类号 |
H01L29/47;H01L29/78 |
主分类号 |
H01L29/47 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|