| 摘要 |
A semiconductor light emitting device and fabrication method thereof is provided to improve optical extraction efficiency by proving an uneven hexagon having an inclined side on the interface of an emitting device. A semiconductor light emitting device(100), a first conductive semiconductor layer(130) is formed with the uneven hexagon. An active layer (140) is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(150) is formed on the active layer. The first conductive semiconductor layer includes the uneven hexagon, C-plane. The uneven is one of an A- plane, an R- plane, and an M- plane of the hexagon. The active layer and the second conductive semiconductor layer are formed with the uneven hexagon on the first conductive semiconductor layer.
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