| 摘要 |
A gate structure and method for manufacturing of the same is provided to reduce the resistance of the metal gate when forming a metal gate with a tungsten layer. A gate structure is compose of a gate conductive layer(104), a first metal barrier layer(106) arranged on the gate conductive layer, and a second metal barrier layer including a first sub metal layer(108) and a second sub metal layer(110). A core growing layer having a beta crystalline structure is arranged on the second metal barrier layer and the metal layer on the core growing layer. The first sub metal barrier layer has a first nitrogen and second metal barrier layer has a second nitrogen of which content is lower than that of the second nitrogen.
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