METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

A method for forming isolation layer of semiconductor device is provided to prevent misalignment of a sensitive film by reducing the loss of the element isolation film generated on a scribe line area. A method for forming isolation layer of semiconductor device is comprised of the steps: forming a hard mask pattern(206) exposing an element isolation region of the semiconductor substrate(200); forming a trench by etching the element isolation region as a etching battier; forming a side wall oxide(208) on the hard mask pattern including the surface of the trench; removing the side wall oxide formed in the upper side of the hard mask pattern; forming a linear nitride film(210) on oxide film of the side wall and the hard mask pattern; forming an insulating layer(212) by burying the trench on the linear nitride film; performing CMP(Chemical Mechanical Polishing) so that the linear nitride film be exposed.