METHOD OF FORMING RECESS CHANNEL TRANSISTOR HAVING LOCALLY THICK DIELECTRICS AND RELATED DEVICE

摘要

A method of forming recess channel transistor having locally thick dielectrics and related device is provided to realize a semiconductor having excellent electrical characteristics by including a dielectric spacer. A method of forming recess channel transistor having locally thick dielectrics and related device is comprised of the steps: forming a first gate trench (61') in a semiconductor substrate(51); forming a dielectric spacer(65) on the side wall of the first gate trench; forming a second gate trench (71') in the semiconductor substrate under the first gate trench; forming a gate dielectric layer(75) on the inner wall of gate trenches; forming the gate electrode(77) filling the gate trenches.