| 摘要 |
<p>A semiconductor device with vertical transistor and method of manufacturing the same is provided to increase integration of the semiconductor by forming a vertical transistor having a channel vertical to a substrate. In a semiconductor device with vertical transistor, a semiconductor substrate(100) is composed of a plurality of metal bit lines (106), an insulating layer(110), and gate(124). The semiconductor substrate includes an element isolation film(102) defining an active area. A plurality of metal bit lines is expanded in one direction inside of active region and the element isolation film. A lamination pattern is formed by laminating a drain region(112), a channel region(114) and source area(116). The insulating layer is formed on the element isolation film and a metal bit line.</p> |
