| 摘要 |
<p>A method for manufacturing of phase change RAM device is provided to suppress the spread of Sb component and prevent the unbalance of each component in the phase change layer. A method for manufacturing of phase change RAM device is comprised of the steps: forming the phase changing layer(116) on a semiconductor substrate(100); forming a diffusion barrier(122) on the side wall of the phase changing layer; forming a vertical PN diode(110) on the semiconductor substrate before forming the phase change layer. The diffusion barrier is made of Sb-Rich layer which is formed through an incline ion implantation.</p> |
