METHOD FOR FORMING DIELECTRIC LAYER OF SEMICONDUCTOR DEVICE

摘要

A method for forming dielectric layer of semiconductor device is provided to increase production yield by improving the characteristic of the device. A method for forming dielectric layer of semiconductor device is comprised of the steps: forming a conductive pattern(210) on a semiconductor substrate(200); forming a first reactor (220a) on the surface of the conductive pattern; forming the interlayer insulating film(230) covering the conductive pattern; forming the second reactor (220b) on the surface of the interlayer insulating film; annealing interlayer insulating film.