| 摘要 |
A manufacturing method of the MOSFET device is provided to suppress the diffusion of impurity by forming an ion implantation layer for the diffusion barrier at the lower part of the channel region. A manufacturing method of the MOSFET device injecting the ion within the semiconductor substrate includes the step for ion-implanting the P- type impurity into the semiconductor substrate in order to form a channel region(240) in a semiconductor substrate(200); the step for ion-implanting either an oxide or a nitride into the semiconductor substrate in which the channel region is formed in order to form an ion implantation layer(250) for the diffusion barrier at the lower part of the channel region.
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