GATE DRIVE CIRCUIT OF SEMICONDUCTOR DEVICE AND GATE DRIVE METHOD

摘要

PROBLEM TO BE SOLVED: To improve trade-off characteristics of noise and switching loss generated during turn-off switching.

SOLUTION: A first MOSFET21 and a second MOSFET22 are connected to a DC power supply in series and a gate terminal of a semiconductor device 1 is connected to a negative-potential-side terminal of the first MOSFET21 and a positive-potential-side terminal of the second MOSFET22. An emitter terminal of the semiconductor device 1 is connected to a negative-potential-side terminal of the second MOSFET22 and a serial circuit of a capacitor 25 and a third MOSFET23 is connected to the second MOSFET22 in parallel. When the semiconductor device 1 is turned off, the second and third MOSFET22, 23 are turned on with the first MOSFET21 turned off.

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