| 摘要 |
PROBLEM TO BE SOLVED: To effectively separate a resist film from a surface of a substrate such as a semiconductor wafer. SOLUTION: This substrate processing device 1 is provided with a sulfuric acid tank 102 for storing sulfuric acid 103 therein, and a hydrogen peroxide water solution tank 142 for storing a hydrogen peroxide water solution 143 therein. In the substrate processing device 1, a liquid film of the hydrogen peroxide water solution is formed on a surface of a semiconductor wafer W by immersing the semiconductor wafer W in the hydrogen peroxide water solution 143, and a high-temperature SPM immediately after mixing is brought into contact with the semiconductor wafer W by immersing the semiconductor wafer W with the liquid film of the hydrogen peroxide solution formed on the surface in high-temperature sulfuric acid 103. COPYRIGHT: (C)2009,JPO&INPIT
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