| 摘要 |
Provided are image sensors and a method of manufacturing the same. The image sensor can include a semiconductor substrate having a metal line and a readout circuitry formed thereon; a photodiode on the semiconductor substrate, the photodiode including a first impurity region and a second impurity region horizontally arranged in a crystalline region; and a first contact and a second contact penetrating the photodiode. The first contact can penetrate the first impurity region of the photodiode, and the second contact can penetrate the second impurity region to connect with the metal line.
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