发明名称 |
Method and Apparatus for Plasma Processing |
摘要 |
An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port 11 by a turbo-molecular pump 3 while introducing the gas within the vacuum chamber 1 from a gas supply device 2, and the pressure within the vacuum chamber 1 is kept at a predetermined value by a pressure regulating valve 4. A high-frequency power supply 5 for a plasma source supplies a high-frequency power to a coil 8 provided near a dielectric window 7 to generate inductively coupled plasma within the vacuum chamber 1. A high-frequency power supply 10 for the sample electrode for supplying the high-frequency power to the sample electrode 6 is provided. A matching circuit 13 for the sample electrode and a high-frequency sensor 14 are provided between the sample electrode high-frequency power supply and the sample electrode 6. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor 14 and an arithmetic device 15.
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申请公布号 |
US2009068769(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
US20060887821 |
申请日期 |
2006.04.04 |
申请人 |
OKUMURA TOMOHIRO;SASAKI YUICHIRO;OKASHITA KATSUMI;ITO HIROYUKI;MIZUNO BUNJI;JIN CHENG-GUO;NAKAYAMA ICHIRO |
发明人 |
OKUMURA TOMOHIRO;SASAKI YUICHIRO;OKASHITA KATSUMI;ITO HIROYUKI;MIZUNO BUNJI;JIN CHENG-GUO;NAKAYAMA ICHIRO |
分类号 |
H01L21/66;G21K5/00 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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