发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
A precharge circuit steps up a voltage of a bit line connected to a memory cell to a power supply voltage. A plurality of step-down circuits step down the voltage of the bit line to a voltage level lower than the power supply voltage before data is read from the memory cell. The plurality of step-down circuits are connected to the bit line, and the plurality of step-down circuits are controlled by step-down control signals different to each other.
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申请公布号 |
US2009067265(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
US20080203431 |
申请日期 |
2008.09.03 |
申请人 |
KOIKE TSUYOSHI;IKEDA YUICHIROU;MASUO AKIRA |
发明人 |
KOIKE TSUYOSHI;IKEDA YUICHIROU;MASUO AKIRA |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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