发明名称 TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a TFT substrate and a manufacturing method thereof that can improve productivity. <P>SOLUTION: The T FT substrate 100 according to the present invention has a semiconductor film 4 having a source region 3a and a drain region 4b, a source electrode 11 electrically connected to the source region 3a and formed of a transparent conductive film 2a on the source region 4a, a drain electrode 12 electrically connected to the drain region 4b and formed of the transparent conductive film 21 on the drain region 4b, a pixel electrode 13 formed to extend from the drain electrode 12 and project from the semiconductor film 4, and a wiring 14 electrically connected to the source electrode 11 and formed of an upper conductive film 22 on the source electrode 11 not to project from the source electrode 11. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009054836(A) 申请公布日期 2009.03.12
申请号 JP20070220901 申请日期 2007.08.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKEGUCHI TORU
分类号 H01L29/786;G02F1/1362;H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L29/417 主分类号 H01L29/786
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