| 摘要 |
PROBLEM TO BE SOLVED: To provide polishing slurry, with which a conductor used for a barrier layer can be polished at a high polishing rate by using the polishing slurry having a low polishing particle concentration and a low metal anticorrosive agent concentration, in a wiring-formation process of a semiconductor device. SOLUTION: The polishing slurry contains polishing particles, a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent, and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the dissociation constant (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid, and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The average particle diameter of the polishing particle measured by a light diffraction/scattering type particle size distribution gauge is 70 nm or less. COPYRIGHT: (C)2009,JPO&INPIT |
