| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of suppressing a lowering of reliability and suppressing defects created on a surface of a compound semiconductor layer and method of manufacturing the same. SOLUTION: An optical semiconductor device has a compound semiconductor layer 22 that is provided on a substrate 10 and includes a first conductivity type cladding layer 12, activation layer 14 and a second conductivity type cladding layer 16 that is the opposite of the first conductivity type. The method includes the sequential steps of: forming a diffusion source layer 42 on the compound semiconductor layer; forming a first diffusion region 23 in the compound semiconductor layer by carrying out a first heat treatment so that the first diffusion region 23 includes a light emitting facet 38 for emitting light from the activation layer, removing the diffusion source layer; forming an SiN film 46 having a refractive index of 1.9 or higher on the compound semiconductor layer; and turning the first diffusion region 23 into the second diffusion region 24 by carrying out a second heat treatment. COPYRIGHT: (C)2009,JPO&INPIT
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