| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing spin-valve giant magnetoresistive films or TMR films satisfying both high magnetoresistive change ratio (MR ratio) and low interlayer coupling magnetic field (Hin). SOLUTION: In a method of manufacturing bottom type spin-valve giant magnetoresistive films or TMR films by film-forming and laminating an anti-ferromagnetic layer, a magnetization fixing layer, a non-magnetic conduction layer or oxide layer, and a magnetization free layer in this order, a step is added to plasma-process a preset laminated layer interface to reduce the interlayer coupling magnetic field acting between the magnetization fixing layer and the magnetization free layer. With this, a film of high MR ratio can be obtained. COPYRIGHT: (C)2009,JPO&INPIT
|
